IGBT(Insulated Gate Bipolar Transistor)，絕緣柵雙極型晶體管，是由BJT(雙極型三極管)和MOS(絕緣柵型場(chǎng)效應(yīng)管)組成的復(fù)合全控型電壓驅(qū)動(dòng)式功率半導(dǎo)體器件, 兼有MOSFET的高輸入阻抗和GTR的低導(dǎo)通壓降兩方面的優(yōu)點(diǎn)。GTR飽和壓降低，載流密度大，但驅(qū)動(dòng)電流較大;MOSFET驅(qū)動(dòng)功率很小，開(kāi)關(guān)速度快，但導(dǎo)通壓降大，載流密度小

產(chǎn)品型號(hào)：FP100R12KT4
廠(chǎng)商性質(zhì)：經(jīng)銷(xiāo)商
更新時(shí)間：2024-01-19
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北京京誠(chéng)宏泰科技原裝正品銷(xiāo)售英飛凌6單元IGBT模塊FP100R12KT4

1200V 100A 。6單元IGBT+三相整流橋+剎車(chē)電路

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